LH8253MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress.
LH8MH includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries.
LHMH8 is rated for operation between the ambient temperatures –40℃ and +85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting.
The package type is in aHalogen Free version was verified by third party Lab.
Features and Benefits
l CMOS Hall IC Technology
l Solid-State Reliability much better than reed switch
l Omni polar output switches with absolute value of North or South pole from magnet
l Low power consumption(2.6mA)
l High Sensitivity for reed switch replacement
l {bfb} tested at 125℃ for K.
l Small Size
l ESD HBM ±4KV Min
l COST competitive
Applications
l Solid state switch
l Lid close sensor for power supply devices
l Magnet proximity sensor for reed switch replacement in high duty cycle applications.
l Safety Key on sporting equipment
l Revolution counter
l Speed sensor
l Position Sensor
l Rotation Sensor
l Safety Key
091713Page 1Rev. 1.04
型號LH8253
Note:Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-
rated conditions for extended periods may affect device reliability.
Electrical Specifications
DC Operating Parameters TA=+25℃, VDD=5.0V
Parameters
Test Conditions
Min
Typ
Max
Units
Supply Voltage,(VDD)
Operating
2.5
6
V
Supply Current,(IDD)
Average
2.6
6.0
mA
Output Low Voltage,(VDSON)
IOUT=10mA
400
mV
Output Leakage Current,(Ioff)
IOFF
BOUT = 5V
10
uA
Output Rise Time,(TR)
RL=10kΩ, CL =20pF
0.45
uS
Output Fall Time,(TF)
RL=10kΩ; CL =20pF
0.45
uS
Electro-Static Discharge
HBM
4
KV
Operate Point,
(BOPS)
S pole to branded side, B > BOP, Vout On
30
60
Gauss
(BOPN)
N pole to branded side, B > BOP, Vout On
-60
-30
Release Point
(BRPS)
S pole to branded side, B < BRP, Vout Off
5
25
Gauss
(BRPN)
N pole to branded side, B < BRP, Vout Off
-25
-5
Hysteresis,(BHYS)
|BOPx - BRPx|
5
Gauss
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